BCW65C डाटा शीट PDF( Datasheet )

BCW65C Discrete POWER & Signal Technologies BCW65C C E SOT-23 Mark: ED B NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. S

NPN Silicon AF Transistors BCW 65 BCW 66 For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary types: BCW 67, BCW 68 (PNP) q Type BCW 65 A BCW 65 B BCW 65

BCW65, BCW66 NPN Silicon AF Transistor
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW67, BCW68 (PNP) 3 2 1 VPS05161 Type BCW65A BCW65B

BCW 65, BCW 66 NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4

BCW65 SERIES BCW66 SERIES SURFACE MOUNT SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 series devices are NPN silicon transistors manufactur

BL Galaxy Electrical NPN General Purpose Amplifier FEATURES z For general AF appilications. z High current gain. Pb Lead-free z Low collector-emitter saturation voltage. z Complementary types:BCW67,BCW68(P

BCW65A,B,C MAXIMUM RATINGS CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR NPN SILICON Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Curren