BCW31 डाटा शीट PDF( Datasheet )

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCW31; BCW32; BCW33 NPN general purpose transistors Product specification Supersedes data of 1997 Jan 29 1999 Apr 13 Philips Semiconductors Product s

BCW31 BCW31 NPN General Purpose Amplifier • This device is designed for general purpose applications at collector currents to 300mA. • Sourced from process 10. 3 2 1 SOT-23 Mark: D1 1. Base 2. Emitte

NPN General Purpose Amplifier FEATURES z Low current(max.100mA). z Low voltage(max.32V). Pb Lead-free Production specification BCW31/32/33 APPLICATIONS z General purpose switching and amplification. ORDERI

BCW31 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW31, manufactured in the popular SOT-23 Surface Mount package, is an NPN General Purpose

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to BCW29/30. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emi

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO VCBO Vebo ic THERMAL CHARACTERISTICS Characteristic Symbol •Total

RoHS BCW31 FEATURES * Low current(100mA) * Low voltage(32V) * General purpose swithching and amplification DABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit TCollector-Base Voltage V