BCV27 डाटा शीट PDF( Datasheet )

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCV27; BCV47 NPN Darlington transistors Product specification Supersedes data of 1997 Sep 04 1999 Apr 08 Philips Semiconductors Product specificatio

BCV27 Discrete POWER & Signal Technologies BCV27 C E SOT-23 Mark: FF B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0

NPN Silicon Darlington Transistors • For general AF applications • High collector current • High current gain • Complementary types: BCV26, BCV46 (PNP) • Pb-free (RoHS compliant) package1) • Qualifi

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCV27 TRANSISTOR (NPN) SOT–23 FEATURES  High Collector Current  High Current Gain MARKING:FF MAXIMUM RATINGS

BCV27 / BCV47 NPN Darlington Transistors for preamplifier input applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Curr

Elektronische Bauelemente BCV27 40 V, 500mA NPN Darlington Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES For general AF application high co