BC859C डाटा शीट PDF( Datasheet )

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846

SMD Type PNP Transistors BC859~BC860 (KC859~KC860) Transistors ■ Features ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● NPN complements: BC849 and BC850. +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -

BC856~BC859 PNP Silicon Epitaxial Transistors For switching and amplifier applications 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER SYMBOL Collector

BC859 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups A, B and C, according to its DC current gain. As complementary type the

PNP Silicon AF Transistors BC 856 ... BC 860 Features q For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q Low noise between 30 Hz and 15 kHz q Comple

BC856 ... BC860 BC856 ... BC860 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2015-05-12 2.9 ±0.1 0.4+0.1 -0.05 3

Features Low current (max. 100 mA). Low voltage (max. 45 V). +0.12.4 -0.1 BC859,BC860 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0