BC859B डाटा शीट PDF( Datasheet )

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846

SMD Type PNP Transistors BC859~BC860 (KC859~KC860) Transistors ■ Features ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● NPN complements: BC849 and BC850. +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -

BC856~BC859 PNP Silicon Epitaxial Transistors For switching and amplifier applications 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER SYMBOL Collector

BC859 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.  特征 / Features 高电流增益，低 VCE(sat)。

Features Low current (max. 100 mA). Low voltage (max. 45 V). +0.12.4 -0.1 BC859,BC860 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0

BC859 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups A, B and C, according to its DC current gain. As complementary type the