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UTC |
NPN SILICON TRANSISTOR * Suitable for automatic insertion in thick and thin-film circuits. * Complement to BC856 … BC860 ORDERING INFORMATION Ordering Number BC846G-x-AE3-R BC847G-x-AE3-R BC848G-x-AE3-R BC849G-x-AE3-R BC850G-x-AE3-R BC846G-x-AL3-R BC847G-x-AL3-R BC848G |
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Infineon |
NPN Silicon AF Transistors |
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NXP |
NPN general purpose transistors • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC859 and BC860. MARKING TYPE NUMBER BC849B BC849C Note 1. ∗ = |
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Siemens Semiconductor Group |
NPN Silicon AF Transistors |
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NXP |
NPN general purpose transistors • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complements: BC859W and BC860W |
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Siemens Semiconductor Group |
NPN Silicon AF Transistor |
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Diotec Semiconductor |
SMD General Purpose NPN Transistors General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) Taped and reeled Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar D |
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LGE |
Transistor Low current (max. 100 mA). Low voltage (max. 45 V). +0.12.4 -0.1 BC859,BC860 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.co |
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Motorola |
General Purpose Transistors MARKING BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F; BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACT |
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Leshan Radio Company |
General Purpose Transistors Junction to Ambient (Note 2.) RqJA Junction and Storage Temperature Range TJ, Tstg 1. FR –5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Value 65 45 30 80 50 30 6.0 6.0 5.0 100 Max 225 1.8 556 300 2.4 417 –55 to +150 |
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Kexin |
NPN Transistors ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● PNP complements: BC859 and BC860. +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2. |
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Infineon Technologies AG |
NPN Silicon AF Transistors ction - soldering point1) Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 IC = 10 mA, IB = 0 IC = 10 mA, IB = 0 IC = 10 µA, IE = 0 IC = 10 µA, IE = 0 IC = 10 µA, IE = 0 BC846T BC847T/BC850T BC848T/BC849T V(BR)CBO 8 |
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Leshan Radio Company |
General Purpose Transistors e Below) 1/6 LESHAN RADIO COMPANY, LTD. DEVICE MARKING AND ORDERING INFORMATION Device Marking LBC846AWT1G 1A LBC846AWT3G 1A LBC846BWT1G 1B LBC846BWT3G 1B LBC847AWT1G 1E LBC847AWT3G 1E LBC847BWT1G 1F LBC847BWT3G 1F LBC847CWT1G |
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Leshan Radio Company |
General Purpose Transistors e Below) 1/6 LESHAN RADIO COMPANY, LTD. DEVICE MARKING AND ORDERING INFORMATION Device Marking LBC846AWT1G 1A LBC846AWT3G 1A LBC846BWT1G 1B LBC846BWT3G 1B LBC847AWT1G 1E LBC847AWT3G 1E LBC847BWT1G 1F LBC847BWT3G 1F LBC847CWT1G |
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Leshan Radio Company |
General Purpose Transistors Junction to Ambient (Note 2.) RqJA Junction and Storage Temperature Range TJ, Tstg 1. FR –5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Value 65 45 30 80 50 30 6.0 6.0 5.0 100 Max 225 1.8 556 300 2.4 417 –55 to +150 |
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Taiwan Semiconductor |
NPN Transistor - Low reverse current, high reliability - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (hal |
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ON Semiconductor |
NPN Silicon Transistor • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP |
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Infineon |
NPN Silicon AF Transistors |
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nexperia |
NPN transistor and benefits • Low current (max. 100 mA) • Low voltage (max. 45 V) • AEC-Q101 qualified 3. Applications • General purpose switching and amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter |
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