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BC849W | NPN general purpose transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BC849W; BC850W NPN general purpose transistors
Product specification Supersedes data of 1997 Jun 20 1999 Apr 12
Philips Semiconductors
Product spec |
NXP |
|
BC849W | NPN Silicon AF Transistors NPN Silicon AF Transistors
BC846W...BC850W
For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary typ |
Infineon |
|
BC849W | SMD General Purpose NPN Transistors BC846W ... BC849W
BC846W ... BC849W SMD General Purpose NPN Transistors
SMD Universal-NPN-Transistoren
IC = 100 mA hFE ~ 180/290/520 Tjmax = 150°C
VCEO = 30...65 V Ptot = 200 mW
Version 2016-11-25
SOT-323 |
Diotec |
|
BC849W-AU | (BC846AW-AU - BC850CW-AU) NPN GENERAL PURPOSE TRANSISTORS BC846AW-AU ~ BC850CW-AU
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE FEATURES
• General purpose amplifier applications • NPN epitaxial silicon, planar design • • • • • Collector current IC = 100mA Acqi |
Pan Jit |
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