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BC848B | NPN Transistor Production specification
NPN general purpose Transistor
FEATURES
High current gain. Excellent hFE linearity .
Pb
Lead-free
Low noise between 30Hz and 15kHz.
For AF input stages and driver a |
GME |
|
BC848B | NPN Transistor BC848B
NPN General purpose transistor
Parameter
VCEO IC
Value
30V 100mA
lFeatures 1)BVCEO minimum is 30V (IC=1mA) 2)Complements the BC858B
lOutline
SOT-23
SST3
lInner ci |
Rohm |
|
BC848B | NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features
Ideally Suited for Automatic Insertion Complementary PNP Types: BC856 – BC858 For switching and AF Amplifier Applications Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Ha |
Diodes Incorporated |
|
BC848B | NPN Transistor BC846A THRU BC849C
Features
• Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designat |
Micro Commercial Components |
|
BC848B | NPN Silicon AF Transistors NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types:
BC85 |
Infineon |
|
BC848B | NPN EPITAXIAL SILICON TRANSISTOR BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor
August 2015
BC846 / BC847 / BC848 / BC850 NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications • Suitable for |
Fairchild Semiconductor |
|
BC848B | SMD General Purpose NPN Transistors BC846 ... BC850
BC846 ... BC850 SMD General Purpose NPN Transistors
SMD Universal-NPN-Transistoren
IC = 100 mA hFE = 180/290/520 Tjmax = 150°C
VCEO = 30...65 V Ptot = 250 mW
Version 2015-10-30
~ SOT-23 (T |
Diotec Semiconductor |
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