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BAX12 | Controlled avalanche diode DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAX12 Controlled avalanche diode
Product specification Supersedes data of April 1996 1996 Sep 17
Philips Semiconductors
Product specification
Controlled avalanc |
Philipss |
|
BAX12 | CONTROLLED AVALANCHE DIODES www.eicsemi.com
BAX12, BAX12A
CONTROLLED AVALANCHE DIODES
FEATURES :
* Switching speed: max. 50 ns * Continuous reverse voltage: max. 90V * Repetitive peak reverse voltage: max. 90V * Repetitive peak forward |
EIC |
|
BAX12A | CONTROLLED AVALANCHE DIODES www.eicsemi.com
BAX12, BAX12A
CONTROLLED AVALANCHE DIODES
FEATURES :
* Switching speed: max. 50 ns * Continuous reverse voltage: max. 90V * Repetitive peak reverse voltage: max. 90V * Repetitive peak forward |
EIC |
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