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BAS4 | CASE 318-08/ STYLE 8 SOT-23 TO-236AB MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BAS40LT1/D
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and volta |
Motorola Inc |
|
BAS4 | Schottky Diodes BAS40 THRU BAS40-06
Schottky Diodes
SOT-23
.122 (3.1) .118 (3.0) .016 (0.4) 3
FEATURES ♦ These diodes feature very low turn-on
Top View
.056 (1.43) .052 (1.33)
voltage and fast switching.
♦ These devices |
General Semiconductor |
|
BAS4 | Low-leakage diode DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D121
BAS45AL Low-leakage diode
Product specification Supersedes data of 1999 May 04 1999 May 28
Philips Semiconductors
Product specification
Low-leaka |
NXP |
|
BAS4 | SCHOTTKY array SERIES BAS40
8700 E. Thomas Road Scottsdale, AZ 85251 Tel: (480) 941-6300 Fax: (480) 947-1503
and
BAS70
SCHOTTKYarray™ SERIES
DESCRIPTION
Various configurations of Schottky barrier's diodes in SOT-23 packages are |
Microsemi Corporation |
|
BAS4 | Silicon Schottky Diode BAS40.../BAS140W
Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing
BAS140W BAS40-02L
BAS40
3
BAS40-04
3 |
Infineon Technologies AG |
|
BAS40 | Surface Mount Barrier Diode Surface Mount Barrier Diode
Features:
• Low turn-on voltage • Fast switching • PN Junction guard ring for transient and ESD protection
Applications:
• High speed switching applications •� |
Multicomp |
|
BAS40 | SURFACE MOUNT SCHOTTKY BARRIER DIODE Product Summary @TA = +25°C
VRRM (V) 40
IO (mA) 200
VFmax (V) 1.0
IRmax (μA) 0.2
Description
200mA surface mount Schottky Barrier Diode in SOT23 (Standard) package, offers low forward voltage drop and fa |
Diodes Incorporated |
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