APT5010B2 डाटा शीट PDF( Datasheet )

APT5010B2FLL APT5010LFLL 500V 46A 0.100W POWER MOS 7TM FREDFET B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching loss

APT5010B2FLL APT5010LFLL 500V 46A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching l

isc N-Channel MOSFET Transistor APT5010B2FLL FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.1Ω(Max) ·100% avalanche t

APT5010B2LC APT5010LLC 500V 47A 0.100W POWER MOS VITM B2LC Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is T-MAX™ TO-264

500V 46A 0.100W APT5010B2LL APT5010LLL B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addres

isc N-Channel MOSFET Transistor APT5010B2LL FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.1Ω(Max) ·100% avalanche te

APT5010B2VFR 500V 47A 0.100Ω POWER MOS V ® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, incre