| No. | Partie # | Fabricant | Description | Fiche Technique |
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Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR S Gate-Source Voltage 30 V +20 V ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 80 50 315 8 |
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