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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ta Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)4 Rthj-a Maximum Thermal Resistance, Junction-ambient Value 3.2 62.5 110 Data & specifications subject to ch |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2 Units V V A A A W W/ °C mJ A mJ °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 64 1.6 0.5 -55 to 15 |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 5.6 39 0.31 2 Units V V A A A W W/ °C mJ A mJ °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 49 1.4 0 |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET -55 to 150 Units V V A A A W W/℃ mJ A mJ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)4 Rthj-a Maximum Thermal Resistance, Junction-ambient |
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