AOY514 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOY514 FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.9mΩ(Max) ·100% avalanche tested

AOD514/AOI514/AOY514 30V N-Channel AlphaMOS General Description • Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-F