| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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Alpha & Omega Semiconductors |
11A N-Channel MOSFET anche energy C,J Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC TC=25° C TC=100° C VGS ID IDM IAR EAR EAS dv/dt PD 278 2.2 11 9 ±30 11* 9* 80 11 60 750 100 20 50 0.4 |
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