AOTF10N50FD डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOTF10N50FD FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) ·100% avalanche

AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of

AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of