AOT11S60L डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOT11S60L FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.399Ω(Max) ·100% avalanche

AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 600V 11A α MOS TM Power Transistor General Description Product Summary The AOT11S60L & AOB11S60L & AOTF11S60L & AOTF11S60 have been fabricated using the advanced αM