AOK18N65 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOK18N65 FEATURES ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.39Ω(Max) ·100% avalanche test

AOK18N65 650V,18A N-Channel MOSFET General Description The AOK18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular