AOI444 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOI444 FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 60mΩ(Max) ·100% avalanche tested

AOD444/AOI444 60V N-Channel MOSFET General Description Product Summary The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those device