डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AOI418 | 30V N-Channel MOSFET AOD418/AOI418
30V N-Channel MOSFET
General Description
The AOD418/AOI418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resist |
Alpha & Omega Semiconductors |
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AOI418 | N-Channel MOSFET isc N-Channel MOSFET Transistor
AOI418
·FEATURES ·Drain Current –ID= 36A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 30V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 7.5mΩ(Max) ·100% avalanche tes |
INCHANGE |
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AOI4184 | 40V N-Channel MOSFET AOD4184/AOI4184
40V N-Channel MOSFET
General Description
Product Summary
The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent t |
Alpha & Omega Semiconductors |
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AOI4184 | N-Channel MOSFET isc N-Channel MOSFET Transistor
AOI4184
·FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 40V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 8mΩ(Max) ·100% avalanche test |
INCHANGE |
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AOI4185 | P-Channel MOSFET isc P-Channel MOSFET Transistor
AOI4185
FEATURES ·Drain Current –ID= -40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= -40V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =15mΩ(Max) ·100% avalanche test |
INCHANGE |
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AOI4185 | P-Channel MOSFET AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. With the excellent th |
Alpha & Omega Semiconductors |
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