AOD510 डाटा शीट PDF( Datasheet )

AOD510/AOI510 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halog

isc N-Channel MOSFET Transistor AOD510 FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.6mΩ(Max) ·100% avalanche tested