AOD508 डाटा शीट PDF( Datasheet )

AOD508/AOI508 30V N-Channel AlphaMOS General Description • Latest Trench Power MOSFET technology • Very Low RDS(on) at 10VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compli

isc N-Channel MOSFET Transistor AOD508 FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0mΩ(Max) ·100% avalanche tested