AOD413 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com AOD413 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistanc

AOD4130/AOI4130 60V N-Channel MOSFET General Description The AOD4130/AOI4130 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor AOD4130 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-

AOD4132 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is

isc N-Channel MOSFET Transistor AOD4132 FEATURES ·Drain Current –ID= 85A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =4.0mΩ(Max) ·100% avalanche tested

AOD4136 TM N-Channel SDMOS POWER Transistor General Description The AOD4136 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge. The result is outstanding efficienc

isc N-Channel MOSFET Transistor AOD4136 FEATURES ·Drain Current –ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS=25V(Min) ·Static Drain-Source On-Resistance : RDS(on) =11mΩ(Max) ·100% avalanche tested