AOD3N50 डाटा शीट PDF( Datasheet )

AOD3N50/AOU3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels

AOD3N50/AOU3N50 500V, 3A N-Channel MOSFET General Description The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and

isc N-Channel MOSFET Transistor AOD3N50 FEATURES ·Drain Current –ID= 2.8A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =3.0Ω(Max) ·100% avalanche teste