डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AOD2N60 | 2A N-Channel MOSFET AOD2N60/AOU2N60
600V, 2A N-Channel MOSFET
General Description
Product Summary
The AOD2N60 & AOU2N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels |
Alpha & Omega Semiconductors |
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AOD2N60 | N-Channel MOSFET isc N-Channel MOSFET Transistor
AOD2N60
FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =4.4Ω(Max) ·100% avalanche tested |
INCHANGE |
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AOD2N60A | 2A N-Channel MOSFET AOD2N60A/AOI2N60A/AOU2N60A
600V,2A N-Channel MOSFET
General Description
• Advanced High Voltage MOSFET technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free C |
Alpha & Omega Semiconductors |
|
AOD2N60A | N-Channel MOSFET isc N-Channel MOSFET Transistor
AOD2N60A
FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =4.7Ω(Max) ·100% avalanche tested |
INCHANGE |
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