डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AOD2610 | N-Channel MOSFET AOD2610
60V N-Channel MOSFET
General Description
The AOD2610 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimiz |
Alpha & Omega Semiconductors |
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AOD2610 | N-Channel MOSFET Isc N-Channel MOSFET Transistor
AOD2610
·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for r |
INCHANGE |
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AOD2610E | N-Channel MOSFET isc N-Channel MOSFET Transistor
AOD2610E
FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage-
: VDSS=60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 9.5mΩ(Max) ·100% avalanche test |
INCHANGE |
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AOD2610E | 60V N-Channel MOSFET AOD2610E/AOI2610E/AOY2610E
60V N-Channel AlphaSGT TM
General Description
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Low Eoss • ESD protected • RoHS and Halogen-Free Comp |
Alpha & Omega Semiconductors |
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