डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AFV10700H | RF Power LDMOS Transistors NXP Semiconductors Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These RF power transistors are designed for pulse applications operating at 960 to 1215 MHz. These dev |
NXP |
|
AFV10700HS | RF Power LDMOS Transistors NXP Semiconductors Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These RF power transistors are designed for pulse applications operating at 960 to 1215 MHz. These dev |
NXP |
www.DataSheet.in | 2017 | संपर्क |