डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
6AM15 | Silicon N/P Channel MOS FET High Speed Power Switching 6AM15
Silicon N/P Channel MOS FET High Speed Power Switching
ADE-208-719 (Z) 1st. Edition February 1999 Features
• Low on-resistance N Channel : RDS(on) = 0.045 Ω typ. P Channel : RDS(on) = 0.085 Ω typ. |
Hitachi Semiconductor |
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6AM15 | Silicon N/P Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
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6AM12 | Silicon N-channel/p-channel Complementary Power MOS Fet Array | Renesas |
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6AM13 | Silicon N-Channel/P-Channel Complementary Power MOS FET Array | Hitachi Semiconductor |
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6AM11 | Silicon N-channel/p-channel Power MOS Fet Array | Renesas |
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6AM14 | Silicon N-Channel/P-Channel Power MOS FET Array | Hitachi Semiconductor |
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