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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
4N60 | 4A 600V N-channel Enhancement Mode Power MOSFET 4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conductio |
ROUM |
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4N60 | N-CHANNEL MOSFET KIA
SEMICONDUCTORS
600V N-CHANNEL MOSFET
4N60
1.Description
The KIA4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state res |
KIA |
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4N60 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
4N60
4.0A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low |
UTC |
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4N60 | N-Channel Power MOSFET SEMICONDUCTOR
4N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET (4A, 600Volts)
DESCRIPTION
The Nell 4N60 is a three-terminal silicon device with current conduction capability of 4A, fast sw |
nELL |
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4N60 | Surface Mount N-Channel Power MOSFET 4N60
Surface Mount N-Channel Power MOSFET
P b Lead(Pb)-Free
Description:
The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge |
WEITRON |
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4N60 | N-Channel Mosfet Transistor isc N-Channel MOSFET Transistor
4N60
DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance |
INCHANGE |
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4N60 | N-Channel MOSFET 4A, 600V, N沟道 场效应晶体管 产品参数规格书
工业型号
FQP4N60C FQPF4N60C
公司型号
H4N60P H4N60F
通俗命名 4N60
H HAOHAI
封装标识
P: TO-220AB F: TO-220FP
包装方式
条管� |
HAOHAI |
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