डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
40N60 | IXSH40N60 VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V
I C25 75 A 75 A
VCE(sat) 2.5 V 3.0 V
Short Circuit SOA Capability
Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA ( |
IXYS Corporation |
|
40N60A4D | HGT1N40N60A4D HGT1N40N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET |
Fairchild Semiconductor |
|
40N60FL | IGBT NGTB40N60FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both |
ON Semiconductor |
|
40N60M2 | N-Channel MOSFET STWA40N60M2
Datasheet
N-channel 600 V, 78 mΩ typ., 34 A MDmesh M2 Power MOSFET in a TO-247 long leads package
D(2, TAB) G(1)
Features
Order code STWA40N60M2
VDS 600 V
RDS(on) max. 88 mΩ
ID 34 A
• Ext |
STMicroelectronics |
|
40N60NPFD | 600V FIELD STOP IGBT SGT40N60NPFDPN_Datasheet
40A, 600V FIELD STOP IGBT
DESCRIPTION
SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application.
FEATURES
4 |
Silan |
|
40N60NPFDPN | 600V FIELD STOP IGBT SGT40N60NPFDPN_Datasheet
40A, 600V FIELD STOP IGBT
DESCRIPTION
SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application.
FEATURES
4 |
Silan |
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