डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
3SK321 | Silicon N-Channel Dual Gate MOS FET 3SK321
Silicon N-Channel Dual Gate MOS FET
ADE-208-711A (Z) 2nd. Edition Dec. 1998 Application
UHF RF amplifier
Features
• Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operat |
Hitachi Semiconductor |
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3SK322 | Silicon N-Channel Dual Gate MOS FET | Hitachi Semiconductor |
|
3SK320 | N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP/ MIX) | Toshiba Semiconductor |
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3SK321 | Silicon N-Channel Dual Gate MOS FET | Hitachi Semiconductor |
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