3DD56 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 3DD56 | NPN silicon low-frequency high-power transistors 3DD56/3DD57 型 NPN 硅低频大功率晶体管
参数符号
测试条件
规范值
单位
ABCDE F
PCM TC=75℃
10
W
ICM 极 限 Tjm 值 Tstg
Rth
VCE=10V IC=0.2A
3 175 -55~150
10
A ℃ ℃
℃/W
V( |
 ETC |
|
| 3DD5601 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R
NPN 型高压功率开关晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD5601（I/U/M）
主要参数
IC VCEO VCBO PC(TO-251/252) PC(TO-126)
MAIN CHARACTERISTICS
1.0A 700V 1400V 10W 20W
封� |
 JILIN SINO-MICROELECTRONICS |
|
| 3DD5602 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R
NPN 型高压功率开关晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD5602（I/U/M）
主要参数
IC VCEO VCBO PC(TO-251/252) PC(TO-126)
MAIN CHARACTERISTICS
1.0A 800V 1500V 10W 20W
封� |
JILIN SINO-MICROELECTRONICS |
|
| 3DD5603 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R
NPN 型高压功率开关晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD5603（I/U/M/Z）
主要参数
IC VCEO VCBO PC(TO-126) PC(TO-220)
MAIN CHARACTERISTICS
1.5A 800V 1500V 20W 40W
封装 |
JILIN SINO-MICROELECTRONICS |
|
| 3DD5606 | CASE-RATED BIPOLAR TRANSISTOR R
低频放大管壳额定的双极型晶体管 CASE-RATED BIPOLAR TRANSISTOR 3DD5606 FOR LOW FREQUENCY AMPLIFICATION
3DD5606
主要参数
BVCBO IC PC
MAIN CHARACTERISTICS
1600V 6A 60W
封装 Package TO-220 |
JILIN SINO-MICROELECTRONICS |
|
| 3DD5606 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPL |
 INCHANGE |
शेयर लिंक :
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