3DD5024 डाटा शीट PDF( Datasheet )

3DD5024 Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package.  特征 / Features 击穿电压高、漏电流小

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Wide Area of Safe Operation ·Built-in Damper Diode APPLICATIONS ·Horizontal deflection out

低频放大管壳额定的双极型晶体管 CASE-RATED BIPOLAR TRANSISTOR 3DD5308DHF FOR LOW FREQUENCY AMPLIFICATION R 3DD5024(P) 主要参数 BVCBO IC VCE(sat) tf MAIN CHARACTERISTICS 1500V 8.0 A 3.0V(max)

R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5024A FOR LOW FREQUENCY 3DD5024A Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»úÐä³öµç

低频放大管壳额定的双极型晶体管 CASE-RATED BIPOLAR TRANSISTOR 3DD5024P FOR LOW FREQUENCY AMPLIFICATION R 3DD5024P 主要参数 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500V 8.0 A 3.0V(max) 1.