डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
3DD208 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.) ·DC Current Gain-
: hFE= 30~250(Min.)@IC= 0.5A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2. |
Inchange Semiconductor |
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3DD207 | Silicon NPN Power Transistors | Inchange Semiconductor |
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3DD200 | Silicon Power Transistor | Inchange |
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3DD209L | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | Jilin Sino |
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3DD209L | NPN Transistor | INCHANGE |
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3DD208 | Silicon NPN Power Transistor | Inchange Semiconductor |
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3DD2073 | NPN Transistor | ETC |
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3DD202B | NPN Transistor | INCHANGE |
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3DD207I | Silicon NPN Power Transistor | Inchange Semiconductor |
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3DD202A | NPN Transistor | INCHANGE |
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3DD200D | NPN Transistor | INCHANGE |
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