3DD207 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD207 DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot vari

3DD2073 型 NPN 硅低频大功率晶体管 参数符号 测试条件 PCM ICM 极 限 Tjm 值 Tstg Rth V(BR)CBO V(BR)CEO V(BR)EBO 直 流 ICBO 参 IEBO 数 VBEsat VCEsat hFE Tc=25℃ VCE=10V IC=0.8A ICB=1mA

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD207i DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·Collector-Emitter Saturation Voltage- : VC