डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
3DD200 | Silicon Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD200
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.) ·DC Current Gain-
: hFE= 30~120(Min.)@IC= 2A ·Collector-Emitter Satur |
Inchange |
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3DD200D | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 8A ·Low Saturation Voltage-
: VCE(sat)= 1.4V(Max)@ IC = 8A ·Minimum Lot-to-Lot variations |
INCHANGE |
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