3DD167 डाटा शीट PDF( Datasheet )

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD164(166), 3DD167(169) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD167A DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot var

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD167B DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot var

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD167C DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot var

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD167D DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot var

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD167E DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot var

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD167F DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot var