3DD13001 डाटा शीट PDF( Datasheet )

Production specification High Voltage Fast Switching NPN Power Transistor 3DD13001 FEATURES  PC=350mW(Mounted on ceramic substrate). Pb  High speed switching. Lead-free  Small flat package. APPL

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR£¨NPN £© TO¡ª 92 FEATURES Power dissipation PCM : 1.25 W£¨ Tamb=25¡æ£© Collector curre

Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13001 FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3EMITTER TRANSISTOR (NPN) TO-251 DataSheet4U.com C

3DD13001 Elektronische Bauelemente 0.2A , 600V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power switching applications A TO-92 D B

SMD Type NPN Transistors 3DD13001 Transistors ■ Features ● Collector-emitter Voltage: V(BR)CEO=400V ● Collector Current: IC=0.2A 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolut

R NPN 型高压功率开关晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13001A 主要参数 IC VCEO PC(TO-92) MAIN CHARACTERISTICS 0.8A 400V 1W 封装 Package 用途 z z z z z 节能灯 �