डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
3DD102A | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.) ·DC Current Gain-
: hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max |
Inchange Semiconductor |
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3DD102B | Silicon NPN Power Transistor | Inchange Semiconductor |
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3DD102C | Silicon NPN Power Transistor | Inchange Semiconductor |
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3DD102 | Silicon NPN Power Transistor | Inchange Semiconductor |
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3DD102A | Silicon NPN Power Transistor | Inchange Semiconductor |
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3DD102 | NPN Silicon Low Frequency High Power Transistor | Shaanxi Qunli Electric |
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3DD102D | NPN Transistor | INCHANGE |
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