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3DD102 | NPN Silicon Low Frequency High Power Transistor Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DD100, 3DD101, 3DD102
NPN Silicon Low Frequency High Power Transistor
Features: 1. Using triple-diffusion process.Excellent ca |
Shaanxi Qunli Electric |
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3DD102 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification 3DD102
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.) ·DC Current Gain-
: hFE= 20(Min.)@IC= 2A ·C |
Inchange Semiconductor |
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3DD102A | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.) ·DC Current Gain-
: hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max |
Inchange Semiconductor |
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3DD102B | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD102B
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.) ·DC Current Gain-
: hFE= 20(Min.)@IC= 2A · |
Inchange Semiconductor |
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3DD102C | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.) ·DC Current Gain-
: hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max |
Inchange Semiconductor |
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3DD102D | NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification 3DD102D
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipatio |
INCHANGE |
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