डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
30N60 | High speed IGBT Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A
VCES
600 V 600 V
IC25
50 A 50 A
VCE(sat)
2.5 V 3.0 V
Symbol
Test Conditions
Maximum Ratings
VCES V
CGR
VGES V
GEM
IC25 IC90 I
CM
SSOA |
IXYS |
|
30N60A | High speed IGBT Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A
VCES
600 V 600 V
IC25
50 A 50 A
VCE(sat)
2.5 V 3.0 V
Symbol
Test Conditions
Maximum Ratings
VCES V
CGR
VGES V
GEM
IC25 IC90 I
CM
SSOA |
IXYS |
|
30N60A4D | HGT1N30N60A4D HGT1N30N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET |
Fairchild Semiconductor |
|
30N60B3D | HGTG30N60B3D Data Sheet
HGTG30N60B3D
April 2004
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs |
Fairchild Semiconductor |
|
30N60C3 | IGBT GenX3TM 600V IGBTs
High-Speed PT IGBTs for 40-100kHz Switching
IXGA30N60C3 IXGP30N60C3 IXGH30N60C3
Symbol
VCES VCGR VGES VGEM
IC25 IC110 ICM SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD Md
Weight
Test Conditions TC |
IXYS |
www.DataSheet.in | 2017 | संपर्क |