30H10K डाटा शीट PDF( Datasheet )

Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The TGD30H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be us

30H10I/30H10K 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which acco

深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 30H10K(文件编号：S&CIC1689) N-Channel Trench Power MOSFET N-C hannel Trench Power MOSFET General Descriptio