| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba |
Transistor |
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INCHANGE |
N-Channel MOSFET Transistor mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=1A VDS(ON) Drain-Source Saturation Voltage IF= 1A; VGS=10V IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0 2SK529 MIN TYP. MA |
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