डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK421 | Silicon N-Channel MOSFET :
SILICON N CHANNEL MPS TYPE (7T-MOS)
HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.
SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.
FEATURES
. High Breakdown Voltage : V(g R ) Dg S =450 |
Sanyo |
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2SK4210 | N-Channel Silicon MOSFET Ordering number : ENA1517
2SK4210
SANYO Semiconductors
DATA SHEET
2SK4210
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Features
• Low ON-resistance, ultrahigh-speed switching. |
Sanyo |
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2SK4210 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK4210
FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage
: VDSS= 900V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.3Ω(Max) @ VGS= 10V ·100% avala |
Inchange Semiconductor |
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2SK4212 | MOSFET To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all |
Renesas |
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2SK4212A | N-CHANNEL POWER MOSFET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4212A
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4212A is N-channel MOS FET device that features a low on-state resistance and excellent switching characteri |
Renesas |
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2SK4212A | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK4212A
FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage
: VDSS= 30V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 8.0mΩ(Max) @ VGS= 10V ·100% aval |
Inchange Semiconductor |
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2SK4213 | MOSFET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4213
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching character |
Renesas |
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