2SK373 डाटा शीट PDF( Datasheet )

2SK3730-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET ■Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof ■Outline Drawi

isc N-Channel MOSFET Transistor 2SK3730-01MR FEATURES ·Drain Current : ID= 70A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.9mΩ(Max) @ VGS= 10V ·100%

Power MOSFETs 2SK3731 N-channel enhancement mode MOSFET ■ Features • Low on-resistance, low Qg • High avalanche resistance (1.4) Unit: mm 10.5±0.3 4.6±0.2 1.4±0.1 0.6±0.1 3.0±0.5 0 to 0.5 • Fo

isc N-Channel MOSFET Transistor 2SK3736 FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 4V ·100% avala

www.DataSheet4U.com 2SK3736 Silicon N Channel MOS FET Power Switching REJ03G0525-0200 Rev.2.00 Jul 27, 2006 Features • Capable of 2.5 V gate drive • Low drive current • Low on-resistance Outline RENESA

Ordering number : ENN8390 2SK3737 2SK3737 Features www.DataSheet4U.com • Low • • N-Channel Silicon MOSFET FM Tuner, VHF Amplifier Applications noise. High power gain. Small reverse transfer capacitan