2SK3699-01MR डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor 2SK3699-01MR FEATURES ·Drain Current : ID= 3.7A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.3Ω(Max) @ VGS= 10V ·100%

www.DataSheet4U.com 2SK3699-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F 200305 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown