2SK367 डाटा शीट PDF( Datasheet )

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications 2SK367 Unit: mm • High breakdown voltage: VGDS = −100 V (min) �

2SK3670 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3670 Chopper Regulator and DC−DC Converter Applications Unit: mm z 2.5V-Gate Drive z Low drain-source ON-resistance: RDS (O

isc N-Channel MOSFET Transistor 2SK3673-01MR FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 700V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.18Ω(Max) @ VGS= 10V ·100%

2SK3673-01MR FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Av

2SK3674-01L,S,SJ (900V/2.0Ω/7A) 1) Package T-PACK L •E•E•ESee Page 2/4 S •E•E•ESee Page 3/4 SJ •E•E•ESee Page 4/4 PRELIMINARY 2) Absolute Maximum Ratings (Tc=25• Ž • @ Items Drain-Sou

isc N-Channel MOSFET Transistor 2SK3674-01L FEATURES ·Drain Current : ID= 7.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) @ VGS= 10V ·100%

2SK3674-01L,S,SJ (900V/2.0Ω/7A) 1) Package T-PACK L •E•E•ESee Page 2/4 S •E•E•ESee Page 3/4 SJ •E•E•ESee Page 4/4 PRELIMINARY 2) Absolute Maximum Ratings (Tc=25• Ž • @ Items Drain-Sou