डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK365 | N-Channel MOSFET TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK365
For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications
2SK365
Unit: mm
· High breakdown voltage: VGDS |
Toshiba Semiconductor |
|
2SK3650-01L | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3650-01L
FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 70mΩ(Max) @ VGS= 10V ·100% a |
Inchange Semiconductor |
|
2SK3650-01L | N-CHANNEL SILICON POWER MOSFET 2SK3650-01L,S,SJ
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalan |
Fuji Electric |
|
2SK3650-01S | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3650-01S
FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 70mΩ(Max) @ VGS= 10V ·100% a |
Inchange Semiconductor |
|
2SK3650-01S | N-CHANNEL SILICON POWER MOSFET 2SK3650-01L,S,SJ
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalan |
Fuji Electric |
|
2SK3650-01SJ | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3650-01SJ
FEATURES ·Drain Current : ID= 33A@ TC=25℃ ·Drain Source Voltage
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 70mΩ(Max) @ VGS= 10V ·100% |
Inchange Semiconductor |
|
2SK3650-01SJ | N-CHANNEL SILICON POWER MOSFET 2SK3650-01L,S,SJ
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalan |
Fuji Electric |
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