डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SK3272-01S | N-Channel MOSFET 2SK3272-01L,S
Trench Gate MOSFET
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
60V 6,5mΩ ±80A 135W
> Outline Drawing
> Applications
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Fuji Electric |
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2SK3272-01SJ | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3272-01SJ
FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 6.5mΩ(Max) @VGS= 40V ·100% a |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |