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2SK322 | N-Channel MOSFET 2SK322
Silicon N-Channel Junction FET
Application
HF wide band amplifier
Outline
MPAK
3 1 2
1. Drain 2. Source 3. Gate
2SK322
Absolute Maximum Ratings (Ta = 25°C)
Item Gate to drain voltage Gate to source |
Hitachi Semiconductor |
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2SK3221 | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3221
FEATURES ·Drain Current : ID= 2A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.4Ω(Max) @ VGS= 10V ·100% avalan |
Inchange Semiconductor |
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2SK3221-AZ | N-Channel MOSFET Transistor isc N-Channel MOSFET Transistor
2SK3221-AZ
FEATURES ·Drain Current : ID= 2A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.4Ω(Max) @ VGS= 10V ·100% ava |
Inchange Semiconductor |
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2SK3224 | N-Channel MOSFET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3224
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3224 2SK3224-Z PACKAGE TO-251 TO-252
DESCRIPTION
This product is N-Channel |
NEC |
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2SK3225 | N-Channel MOSFET |
NEC |
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2SK3228 | N-Channel MOSFET 2SK3228
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-765A(Z) Target specification 2nd. Edition December 1998 Features
• Low on-resistance R DS(on) =6mΩ typ. • Low drive current • 4V gat |
Hitachi Semiconductor |
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2SK3228 | Silicon N-Channel MOSFET 2SK3228
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1094-0400 Rev.4.00 May 15, 2006
Features
• Low on-resistance RDS (on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be d |
Renesas |
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